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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDW42/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. * High DC Current Gain - hFE = 2500 (typ.) @ IC = 5.0 Adc. * Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) -- BDW46 VCEO(sus) = 100 Vdc (min.) -- BDW42/BDW47 * Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc * Monolithic Construction with Built-In Base Emitter Shunt resistors * TO-220AB Compact Package MAXIMUM RATINGS BDW42* BDW46 BDW47* *Motorola Preferred Device NPN PNP DARLINGTON 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 - 100 VOLTS 85 WATTS PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCB VEB IC IB BDW46 80 80 BDW42 BDW47 100 100 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 15 Collector Current -- Continuous Base Current 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 85 0.68 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 55 to + 150 _C CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.47 _C/W 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 1. Power Temperature Derating Curve Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 3-212 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. (2) Pulse Test non repetitive: Pulse Width = 250 ms. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS SECOND BREAKDOWN (2) ON CHARACTERISTICS (1) OFF CHARACTERISTICS Motorola Bipolar Power Transistor Device Data V1 APPROX 25 s - 12 V tr, tf 10 ns DUTY CYCLE = 1.0% RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 APPROX + 8.0 V D1 51 8.0 k 150 0 Small-Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Second Breakdown Collector Current with Base Forward Biased BDW42 Base-Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) BDW46/BDW47 v Figure 2. Switching Times Test Circuit for td and tr, D1 id disconnected and V2 = 0 For NPN test circuit reverse all polarities [ [ + 4.0 V Characteristic [ [ VCC - 30 V RC SCOPE BDW41/BDW46 BDW42/BDW47 BDW46 BDW42/BDW47 BDW46 BDW42/BDW47 BDW42 BDW46/BDW47 VCE = 28.4 Vdc VCE = 40 Vdc VCE = 22.5 Vdc VCE = 36 Vdc 0.1 0.07 0.05 0.1 0.2 0.3 t, TIME ( s) 0.7 0.5 1.0 2.0 3.0 5.0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 ts VCEO(sus) VCE(sat) VBE(on) Symbol 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times ICBO ICEO IEBO Cob hFE IS/b hfe fT td @ VBE(off) = 0 V BDW42 BDW46 BDW47 1000 250 Min 80 100 300 4.0 3.0 1.2 3.8 1.2 -- -- -- -- -- -- -- -- -- -- tf tr Max 200 300 3.0 2.0 3.0 2.0 1.0 1.0 2.0 2.0 -- -- -- -- -- -- -- -- -- -- 5.0 7.0 10 3-213 mAdc mAdc mAdc MHz Unit Adc Vdc Vdc Vdc pF BDW42 BDW46 BDW47 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.05 0.02 t1 SINGLE PULSE t2 P(pk) RJC(t) = r(t) RJC RJC = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 300 500 1000 D = 0.5 0.2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 Figure 4. Thermal Response ACTIVE-REGION SAFE OPERATING AREA 50 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW42 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) dc TJ = 25C 1.0 ms 0.1 ms 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 BDW46 BDW47 20 30 2.0 3.0 5.0 7.0 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITED @ TC = 25C (SINGLE PULSE) TJ = 25C 1.0 ms 0.1 ms 0.5 ms 0.5 ms dc Figure 5. BDW42 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 5 and 6 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second break10,000 hFE, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 Figure 6. BDW46 and BDW47 down pulse limits are valid for duty cycles to 10% provided TJ(pk) 200_C. TJ(pk) may be calculated from the data in Fig. 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v * Linear extrapolation 300 TJ = + 25C 200 C, CAPACITANCE (pF) TJ = 25C VCE = 3.0 V IC = 3.0 A BDW46, 47 (PNP) BDW42 (NPN) 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 100 70 50 Cib Cob BDW46, 47 (PNP) BDW42 (NPN) 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 0.1 Figure 7. Small-Signal Current Gain 3-214 Figure 8. Capacitance Motorola Bipolar Power Transistor Device Data BDW42 BDW46 BDW47 BDW40, 41, 42 (NPN) 20,000 VCE = 3.0 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 - 55C TJ = 150C 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 - 55C 25C TJ = 150C 20,000 VCE = 3.0 V BDW45, 46, 47 (PNP) 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 10. Collector Saturation Region BDW40, 41, 42 (NPN) 3.0 TJ = 25C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.5 3.0 TJ = 25C BDW45, 46, 47 (PNP) 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 1.5 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 1.0 0.5 IC, COLLECTOR CURRENT (AMP) Figure 11. "On" Voltages Motorola Bipolar Power Transistor Device Data 3-215 BDW42 BDW46 BDW47 V, TEMPERATURE COEFFICIENT (mV/ C) + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 25C to 150C - 3.0 - 4.0 - 5.0 0.1 0.2 0.3 0.5 0.7 1.0 VB for VBE - 55C to 25C 2.0 3.0 5.0 7.0 10 *VC for VCE(sat) - 55C to 25C *IC/IB v 250 25C to 150C V, TEMPERATURE COEFFICIENTS (mV/C) + 5.0 + 5.0 + 4.0 + 3.0 + 2.0 + 1.0 0 - 1.0 - 2.0 - 3.0 - 4.0 - 5.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 *VC for VCE(sat) - 55C to + 25C VB for VBE + 25C to 150C - 55C to +25C *IC/IB v 250 + 25C to 150C IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 10- 1 + 0.6 + 0.4 TJ = 150C 100C 25C + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4 REVERSE VCE = 30 V FORWARD 105 104 103 102 TJ = 150C 101 100 100C REVERSE VCE = 30 V FORWARD 25C 10- 1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut-Off Region NPN BDW42 COLLECTOR PNP BDW46 BDW47 COLLECTOR BASE BASE [ 8.0 k [ 60 EMITTER [ 8.0 k [ 60 EMITTER Figure 14. Darlington Schematic 3-216 Motorola Bipolar Power Transistor Device Data BDW42 BDW46 BDW47 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 Motorola Bipolar Power Transistor Device Data *BDW42/D* 3-217 BDW42/D |
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